Magnachip Semiconductor Company has launched 4 new MXT LV (magnachip eXtreme trench low voltage) metal-oxide-semiconductor field-effect transistors (MOSFETs), utilizing super-short channel expertise. It will allow Magnachip to additional develop its seventh-generation MXT LV MOSFET line-up for battery safety circuits of cellular units.
Tremendous-Quick Channel is Magnachip’s design expertise to cut back Ron (the resistance of MOSFETs throughout on-state operation) by shortening the channel size between the supply and the drain. The Ron of those new MOSFETs has been diminished by 24~40%, in comparison with earlier generations, and because of this, the battery efficiency is improved with low energy losses when a battery is charging or discharging.
As well as, Magnachip gives customised design service for these merchandise, primarily based on the appliance specs and battery capacities, so the sizes of the MOSFETs could be diminished by 5 to twenty% respectively.
With these technical capabilities, versatile design and compact measurement choices, the prolonged MXT LV MOSFET line-up satisfies the varied technical necessities of a variety of cellular units, from foldable telephones to wi-fi earphones.
“Magnachip has launched 5 new MXT LV MOSFETs for battery safety circuits to this point this 12 months,” says YJ Kim, CEO of Magnachip. “We are going to proceed to create premium MOSFETs that provide nice energy effectivity and excellent efficiency for cellular units to solidify our presence available in the market.”
Product options
- Seventh-generation silicon trench expertise
- Decreased Ron by roughly 24%~40% in comparison with the earlier generations
- Enhanced switching pace by means of low whole gate cost
- Options for a variety of cellular units
Household of Seventh-generation MXT LV MOSFETs
| Product | VDS | RDS(on)1 | RSS(on)2 | Package deal |
| MDWC12D028ERH | 12V | 2.8mΩ | WLCSP | |
| MDWC12D044E | 12V | – | 4.4mΩ | WLCSP |
| MDWC22D020E | 22V | – | 2.0mΩ | WLCSP |
| MDW24D048E | 24V | 4.8mΩ | – | Wafer |
| MDW24D150E | 24V | 15.0mΩ | – | Wafer |
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